Ingacom GaN features the advantages including：

· Excellent Figure-of-Merit (RON*QG) and device performance

· High threshold voltage with wide adjustable range, high noise immunity and excellent gate reliability

· Si-compatible gate voltage range (±20V), large gate swing, highly reliable, no clamping circuit or negative gate bias needed

· Compatible with conventional gate drivers for Si MOSFETs, capable to directly replace Si devices without any extra changes, low R&D cost, short iteration cycle and fast design-in with low risks.

The satellite communication system is a kind of microwave communications, using satellites as relay stations to forward microwave signals and communicate between multiple ground stations. The main purpose of satellite communication is to achieve 'gapless' coverage on the ground. Ingacom GaN RF products can provide best RF solutions for satellite L/S/C band communications.

With excellent features including high power density and high frequency, GaN RF devices can well meet the requirements of high power, high communication frequency band and high efficiency for 5G base stations. At present, most 5G NR macro stations below 6GHz use GaN RF power transistors. Ingacom can provide various GaN RF PA products in communication frequency bands, offering customers with cost-effective solutions.

RF can not only be used as a signal carrier (radar, mobile communication, etc.), but also a carrier of energy itself, which has been widely used in applications including microwave ovens and nuclear magnetic resonance. The solid-state RF power semiconductors play an important role in this kind of  application. Ingacom can provide VHF to C-band high power RF semiconductor products. The company is committed to providing customers with cost-effective products and solutions and, is willing to work with industry partners to promote the development of the RF energy industry.