Ingacom GaN features the advantages including：

· Excellent Figure-of-Merit (RON*QG) and device performance

· High threshold voltage with wide adjustable range, high noise immunity and excellent gate reliability

· Si-compatible gate voltage range (±20V), large gate swing, highly reliable, no clamping circuit or negative gate bias needed

· Compatible with conventional gate drivers for Si MOSFETs, capable to directly replace Si devices without any extra changes, low R&D cost, short iteration cycle and fast design-in with low risks.