Ingacom GaN TO series products are the first and the only available GaN power solutions on the market, that are capable to pin-to-pin replace conventional Si MOSFETs. Combined with GaN-on-Sapphire technology and cascode connections, these devices provide excellent gate reliability, robust noise immunity and low on-state resistance that together offer customers with the most user-friendly application experience with the best price on the market. 

Our 650V products now cover from 75mΩ to 3.2Ω range, by replacing conventional Si MOSFETs without any changes in the systems,  they offer better performance and higher system efficiency. These products have been widely accepted in consumable electronics including traditional adaptors and PD chargers. 

Ingacom DFN series GaN power devices combine the superior GaN material features including wide band gap, high breakdown field and high electron mobility together with the advantages of cascode structure including high threshold voltage, high reliability and low Miller capacitance. The device perfectly presents customers with the advantages of high switching frequency and low energy loss of GaN power devices, through various low-parasitic, small-volume packaging forms including DFN5X6, DFN8X8, etc, that meets the ultimate pursuit of small size and high portability.

Ingacom has now launched its first complete series of 650V GaN power devices based on cascode structure. The device specifications currently cover 75mΩ to 3.2Ω. Over 6 main products have been shipped in batches for PD fast charging applications, covering power levels from 30W to 140W, and the overall performance including the system size, efficiency, cost and other comprehensive figures has been highly recognized by the market.