Description
INGACOM IGAS0540P40L GaN pre-matched power transistor is a pre-matched power amplifier based on 0.5um GaN HEMT process, which can provide more than 10W output power within 0.5~4GHz, with high gain, high efficiency, wide frequency band It can support CW, pulse or any modulated signal. This product adopts 3mm*3mm DFN package, which can be used by surface mount.
Features
· Frequency: 0.5 to 4 GHz
· Output Power(Psat) : 10 W
· Power Gain: 13dB@2.5GHz
· Typical DE(Psat): 65%@2.5GHz
· Operating Voltage: 28 V
· CW and Pulse capable
Functional Block Diagram
Applications
· Base station
· Radio relay station
· Military radar
· Civilian radar
· Test instrumentation
· Jammers
· Microwave oven
OrderOrdering Information
· IGAS0540P40L
Recommended Operating Conditions
Electrical performance is measured under conditions noted in the electrical specifications table.
Notes:
1. To be adjusted to desired IDQ
Absolute Maximum Ratings
Microwave electrical properties
Item | Logo | Drain Voltage （V） | Frequency（GHz） | Parameter | Units |
Min | Type | Max |
Saturation Power | Psat | 28 | 0.5~4 | 40 | 41 | - | dBm |
Drain Efficiency | DE | 0.5~2 | - | 65 | - | % |
2~3 | - | 65 | - |
3~4 | - | 60 | - |
Power Gain | GP | 0.5~2 | - | 14 | - | dB |
2~3 | - | 13 | - |
3~4 | - | 12 | - |
Output VSWR | VSWRout | 28 | DC~2 | 10:1 no damage | - |
Package
Application
The following circuit is the recommended circuit for 2.2~2.8GHz
Numbering | Numerical value | Units |
C1、C2、C5、C6 | 8.2 | pF |
C4、C7 | 100 | pF |
C3、C8 | 1000 | pF |
C9、C10 | 100 | uF |
R1 | 10 | OHm |
Precautions
When the product is powered on, the gate voltage VGS should be added first, followed by the drain voltage VDS;
When the product is powered off, the drain voltage VDS should be removed first, and then the gate voltage VGS should be removed.
Product requires anti-static operation
Part Number System
