Description
INGACOM IGAT0540P44L GaN pre-matched power transistor is a pre-matched power amplifier based on 0.5um GaN HEMT process, which can provide more than 25W output power in DC~4GHz, with high gain, high efficiency, wide frequency band It can support CW, pulse or any modulated signal.
Features
· Frequency: 0.5 to 4 GHz
· Output Power(Psat) : 25 W
· Power Gain: 13dB@2.5GHz
· Typical DE(Psat): 65%@2.5GHz
· Operating Voltage: 28 V
· CW and Pulse capable
Functional Block Diagram
Applications
· Base station
· Radio relay station
· Military radar
· Civilian radar
· Test instrumentation
· Jammers
· Microwave oven
OrderOrdering Information
· IGAS0540P44L
Recommended Operating Conditions
Electrical performance is measured under conditions noted in the electrical specifications table.
Notes:
1. To be adjusted to desired IDQ
Absolute Maximum Ratings
Microwave electrical properties
Item | Logo | Drain Voltage （V） | Frequency（GHz） | Parameter | Units |
Min | Type | Max |
Saturation Power | Psat | 28 | 0.5~4 | 44 | 44.5 | - | dBm |
Drain Efficiency | DE | 0.5~2 | - | 65 | - | % |
2~3 | - | 60 | - |
3~4 | - | 55 | - |
DC~4 | - | 12 | - |
Output VSWR | VSWRout | 28 | DC~2 | 10:1 no damage | - |
Package
Application
The following circuit is the recommended circuit for 2.4~2.8GHz
Numbering | Numerical value | Units |
C1、C2、C6、C7 | 8.2 | pF |
C5、C8 | 100 | pF |
C4、C9 | 1000 | pF |
C3、C10 | 100 | uF |
R1 | 15 | OHm |
The following circuit is the recommended circuit for 1.2~1.6GHz
Precautions
When the product is powered on, the gate voltage VGS should be added first, followed by the drain voltage VDS;
When the product is powered off, the drain voltage VDS should be removed first, and then the gate voltage VGS should be removed.
Product requires anti-static operation
Part Number System
