Description
The IGAT0540P50H GaN pre-matched power transistor is a pre-matched power amplifier based on 0.5um GaN HEMT process, which can provide more than 100W output power in DC~4GHz, with high gain, high efficiency, wide frequency band and other characteristics, can support CW, pulse or any modulated signal.
Features
· Frequency: DC to 4 GHz
· Output Power(Psat) : 100 W
· Power Gain: 12dB@2.5GHz
· Typical DE(Psat): 60%@2.5GHz
· Operating Voltage: 48 V
· CW and Pulse capable
Functional Block Diagram
Applications
· Base station
· Radio relay station
· Military radar
· Civilian radar
· Test instrumentation
· Jammers
· Microwave energe
OrderOrdering Information
· IGAT0540P50H
Recommended Operating Conditions
Electrical performance is measured under conditions noted in the electrical specifications table.
Notes:
1. To be adjusted to desired IDQ
Absolute Maximum Ratings
Microwave electrical properties
Item | Logo | Drain Voltage （V） | Frequency（GHz） | Parameter | Units |
Min | Type | Max |
Saturation Power | Psat | 48 | DC~4 | 50 | 50.5 | - | dBm |
Drain Efficiency | DE | DC~2 | - | 65 | - | % |
2~3 | - | 60 | - |
3~4 | - | 55 | - |
Power Gain | GP | DC~2 | - | 13 | - | dB |
2~3 | - | 12 | - |
3~4 | - | 11 | - |
Package
Application
The following circuit is the recommended circuit for 2.2~2.7GHz
Precautions
When the product is powered on, the gate voltage VGS should be added first, followed by the drain voltage VDS;
When the product is powered off, the drain voltage VDS should be removed first, and then the gate voltage VGS should be removed.
Product requires anti-static operation
Part Number System
