For the growing GaN fast charging market, Infineon Semiconductor has launched a number of mature 650V GaN power devices. With a complete range of device technologies and obvious cost competitive advantages, it has been widely recognized by the market and provides the simplest, economical and efficient solutions for different power application scenarios.
With the continuous penetration of gallium nitride in fast charging applications, the latest 650V gallium nitride power device IGC6041 launched by Infineon is tailored for fast charging products with a power level of 33W.
The device adopts the gallium nitride D-mode technology route, and cooperates with low-voltage Si MOS to form a Cascode structure, with high threshold voltage, high efficiency and reliability, and flexible use. IGC6041 can be used with all current mainstream GaN-specific driver chips and traditional silicon driver chips, with simple solution development and strong market penetration. At the same time, the device adopts DFN5X6 package to meet customers' pursuit of small size. Finally, through innovative design, the cost of Cascode devices is reduced, and the comprehensive competitiveness of the device is further improved.
Based on the IGC6041, Infineon has launched a variety of fast charging solutions. The 33W PD fast charging solution in the picture below uses a domestic driver, the PCBA volume is 25*26*29CM, the device temperature rise is low, and the efficiency is as high as 92%. At present, IGC6041 has passed batch verification on a variety of solutions, which can provide customers with design reference and help customers quickly achieve mass production.
At the same time, the IGC6021 launched by Infineon is also a 650V gallium nitride Cascode cascade device in DFN8X8 package. It works stably and reliably in 65W fast charging applications, and the overall efficiency is comparable to the traditional E-mode solution. It has been shipped in batches and received customers. and market recognition.
IGC6611 is a 650V GaN E-mode device, DFN6X8 package, low on-resistance, low Miller capacitance, with industry-leading power device quality factor (RON*QG), bringing users higher switching frequency and conversion efficiency .
Up to now, the full range of GaN device types launched by Infineon can meet different customer design requirements. The corresponding PD fast charging and adapter solutions have high power density, high efficiency, low cost, and low standby power consumption. and other characteristics, the power application range covers 20W to 120W, and the performance parameters are comparable to the existing commercial solutions.
About Infineon
INGACOM SEMICONDUCTOR CO., LTD. was established in February 2019 and is located in Shenzhen Nanshan District Science and Technology Park and Suzhou Xiangcheng District High Speed Rail New City. Infineon focuses on the third-generation compound semiconductors and has a number of independent patented technologies in the field of gallium nitride power devices. The company has formed a team that has been working for many years by Huawei, ZTE, and well-known companies at home and abroad. It has been deeply involved in the semiconductor field for many years, and has solid chip design capabilities and rich experience in semiconductor product sales.
INGACOM will participate in the 2021 USB PD & Type-C Asia Exhibition held by the charging head network on November 26. Those interested in Yingjiatong's solutions are welcome to visit booth B07 for negotiation and consultation.