At the beginning of the new year, Ingacom Semiconductor launched the first 65W gallium nitride PD fast charging design solution. The scheme adopts Ingacom's 650 V enhancement mode gallium nitride power device IGC6E01R0, which is one of the Ingacom HybridGaN TM series devices. The device features low on-resistance, low parasitic capacitance, etc., and is suitable for high-frequency and high-voltage power conversion applications, and further enhances power density.

The solution is equipped with the mainstream ON Semiconductor NCP1342 as the primary main control chip, with high operating frequency to meet the requirements of small volume and high power density. The secondary synchronous rectification part uses MPS MP6908A and Hengtaike HGN080N10AL 100 V MOS to provide output power for users.

The overall volume of the solution is only 30 mm X 19 mm X 19 mm, with high power density, high efficiency (peak efficiency > 93 %), low standby power consumption (standby power consumption < 60 mW) and other characteristics, nitriding under 220 V AC The gallium power device IGC6E01R0 has good temperature rise performance and is safe and reliable. At the same time, it supports a variety of charging protocols, and its performance parameters are comparable to the existing commercial 65 W GaN fast charging products. At present, the parameter standards and reliability of the device have been verified, and it is expected to be officially launched in the first quarter of 2021.